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R6509ENXC7G

  • R6509ENXC7G
  • R6509ENXC7G

R6509ENXC7G

R6509ENXC7G

Rohm Semiconductor

650V 9A TO-220FM, LOW-NOISE POWE

R6509ENXC7G Ficha de datos

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

R6509ENXC7G Precios y pedidos

Cantidad Precio unitario Precio Externo
1 $2.92000 $2.92
1000 items
Upload BOM File

R6509ENXC7G Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Bajada de costes de Bom
Bajada de costes de Bom
Precios al por mayor para cada pedido, grande o pequeño
Precios al por mayor para cada pedido, grande o pequeño

R6509ENXC7G Rohm Semiconductor

Nombre Valor
Estado del producto Active
tipo feto N-Channel
tecnología MOSFET (Metal Oxide)
voltaje de drenaje a fuente (vdss) 650 V
Corriente - drenaje continuo (id) a 25 °C 9A (Ta)
Voltaje de la unidad (máximo RDS activado, mínimo RDS activado) 10V
rds activado (máximo) @ id, vgs 585mOhm @ 2.8A, 10V
vgs(th) (máximo) @ id 4V @ 230µA
carga de compuerta (qg) (máx.) @ vgs 24 nC @ 10 V
vgs (máximo) ±20V
capacitancia de entrada (ciss) (máx.) a vds 430 pF @ 25 V
característica fet -
disipación de potencia (máxima) 48W (Tc)
Temperatura de funcionamiento 150°C (TJ)
tipo de montaje Through Hole
paquete de dispositivo del proveedor TO-220FM
paquete / caja TO-220-3 Full Pack
Q1: What is the purchase guide for R6509ENXC7G?
R6509ENXC7G of Rohm Semiconductor is a 650V 9A TO-220FM, LOW-NOISE POWE. ICHOME is a long-term spot supplier of R6509ENXC7G, supporting sample purchase and bulk order.
Q2: How to find the detailed information of R6509ENXC7G?
Download R6509ENXC7G Ficha de datos
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingR6509ENXC7G from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide R6509ENXC7G alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you R6509ENXC7G replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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